V40170C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	V40170C-M3
Manufacturer	Vishay
File Size	125.27 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40170C-M3 Datasheet
Additional preview pages of the V40170C-M3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 V40170C 3 2 1 PIN 1 PIN 2 PIN 3 CASE.

V40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PG - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V400DK1-KS1 - TFT LCD Module (INNOLUX)
V400H1-L01 - TFT LCD (Chi Mei)
V400H1-L02 - TFT LCD (CMI MEI)
V400H1-L04 - TFT LCD (CMI MEI)
V400H1-L05 - TFT LCD (CMI MEI)

Other Datasheets by Vishay

Published: Apr 18, 2016 |