V40D100C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

V40D100C-M3 dual high-voltage trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V40D100C-M3
Manufacturer	Vishay
File Size	99.13 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40D100C-M3 Datasheet

More Datasheets from Vishay

Part Number	Description
V40D100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D100CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D120C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D120CHM3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
V40D45C	Trench MOS Barrier Schottky Rectifier
V40D60C	Trench MOS Barrier Schottky Rectifier
V40DL45	Trench MOS Barrier Schottky Rectifier
V40DL45BP	Trench MOS Barrier Schottky Rectifier
V40DM100C	Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

www.vishay.com V40D100C-M3, V40D100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TMBS ® eSMP® Series TO-263AC (SMPD) K 1 2 Top View Bottom View V40D100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM VF at IF = 20 A (TA = 125 °C) TJ max. 250 A 0.63 V 150 °C Package TO-263AC (SMPD) Diode variations Dual common cathode FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.