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V40D100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

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V40D100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – V40D100C

Datasheet Details

Part number	V40D100C
Manufacturer	Vishay
File Size	120.01 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40D100C Datasheet
Additional preview pages of the V40D100C datasheet.

Product details

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPIC.

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Published: Sep 12, 2013 |