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V60100P Datasheet Dual High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: .DataSheet.co.kr New Product V60100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Datasheet Details

Part number V60100P
Manufacturer Vishay
File Size 165.51 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet V60100P_Vishay.pdf

Key Features

  • TMBS®.
  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation 3 2 1.
  • Low thermal resistance.
  • Solder dip 260 °C, 40 s.
  • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

Similar Datasheet

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Vishay Siliconix Logo V60100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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V60100P Distributor