V60100P Datasheet | Vishay

.DataSheet.co.kr New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10 A Features TMBS® - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation 3 2 1 - Low thermal resistance - Solder dip 260 °C, 40 s - ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A...