V60100P Description
.DataSheet.co.kr New Product V60100P Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.456 V at IF = 10.
V60100P Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Low thermal resistance
- Solder dip 260 °C, 40 s
- ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC