V60100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay Siliconix

Part number	V60100C
Manufacturer	Vishay Siliconix
File Size	125.12 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V60100C Datasheet
Additional preview pages of the V60100C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 2, 2012 |