Vishay V60100PW
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| Part No. | V60100PW |
|---|---|
| Datasheet | V60100PW Download |
| Manufacturer |  Vishay |
| Description | Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| Buy | Stock & Price |
FEATURES
● Trench MOS Schottky technology● Low forward voltage drop, low power losses
● High efficiency operation
● Solder dip 275 °C max. 10 s, per JESD 22-B106
● Material categorization: For definitions of compliance please see TO-3PW PIN 1 PIN 3 PIN 2 CASE
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 350 A EAS at L = 180 mH VF at IF = 30 A 700 mJ 0.66 V TJ max. 150 °C Package TO-3PW Diode variations Dual common cathodeMECHANICAL DATA
Case: TO-3PW Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated lea
