V60DM100C - Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology Available.
Very low profile - typical height of 1.7 mm.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 TYPI.

Vishay

Datasheet Details

Part number	V60DM100C
Manufacturer	Vishay
File Size	105.35 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V60DM100C Datasheet

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Full PDF Text Transcription

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www.vishay.com V60DM100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.40 V at IF = 5.0 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.

Published: Jun 8, 2020 |