V8PAL50-M3 Overview
V8PAL50-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SMPATM Top View Bottom View DO-221BC (SMPA) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package 8.0 A 50 V 120 A 0.40 V 150 °C DO-221BC (SMPA) Diode variation Single die.
V8PAL50-M3 Key Features
- Very low profile
- typical height of 0.95 mm
- Ideal for automated placement
- Trench MOS Schottky technology
- Low power losses, high efficiency
- Low forward voltage drop
- Meets MSL level 1, per J-STD-020, LF maximum peak
- Material categorization: for definitions of pliance