V8PAL50-M3 - Surface Mount Trench MOS Barrier Schottky Rectifier

Features

Very low profile - typical height of 0.95 mm.
Ideal for automated placement.
Trench MOS Schottky technology.
Low power losses, high efficiency.
Low forward voltage drop.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	V8PAL50-M3
Manufacturer	Vishay
File Size	131.13 KB
Description	Surface Mount Trench MOS Barrier Schottky Rectifier
Datasheet	V8PAL50-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com V8PAL50-M3 Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier TMBS® SMPATM Top View Bottom View DO-221BC (SMPA) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package 8.0 A 50 V 120 A 0.40 V 150 °C DO-221BC (SMPA) Diode variation Single die FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.vishay.

Published: Mar 29, 2017 |