VB20150C-E3 Datasheet Dual High Voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: V20150C-E3, VF20150C-E3, VB20150C-E3, VI20150C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Datasheet Details

Part number	VB20150C-E3
Manufacturer	Vishay
File Size	204.32 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20150C-E3-Vishay.pdf

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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