VB20200C Datasheet Dual High-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com V20200C, VF20200C, VB20200C, VI20200C Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.

Datasheet Details

Part number	VB20200C
Manufacturer	Vishay
File Size	150.73 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20200C_Vishay.pdf

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-263AB K TO-262AA K.

VB20200C Distributor & Price

Compare VB20200C distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from Vishay

Part Number	Description
VB20200C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20200G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20200G-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20100S	High-Voltage Trench MOS Barrier Schottky Rectifier
VB20100S-E3	High Voltage Trench MOS Barrier Schottky Rectifier
VB20100SG	High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier