VB20200G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Low thermal resistance.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

Vishay

Datasheet Details

Part number	VB20200G-E3
Manufacturer	Vishay
File Size	209.15 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20200G-E3 Datasheet
Additional preview pages of the VB20200G-E3 datasheet.

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Full PDF Text Transcription

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V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200G 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20200G 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20200G PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 3 2 VI20200G 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 200 V 110 A 0.

Published: Jun 8, 2020 |