VBT2060C-E3
VBT2060C-E3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3
.vishay.
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT2060C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
VFT2060C
PIN 1
PIN 2
PIN 3
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package)
- Material categorization: for definitions of pliance please see .vishay./doc?99912
TO-263AB K
TO-262AA K
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
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