VBT2060G
VBT2060G is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
VT2060G, VFT2060G, VBT2060G, VIT2060G
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT2060G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
VFT2060G
PIN 1
PIN 2
PIN 3
TO-262AA K
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
- Material categorization: For definitions of pliance please see .vishay./doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
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