VBT2060G - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VBT2060G
Manufacturer	Vishay
File Size	151.64 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT2060G Datasheet
Additional preview pages of the VBT2060G datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 5, 2016 |