VBT2080C-E3 - Dual Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

VBT2080C-E3 dual trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	VBT2080C-E3
Manufacturer	Vishay
File Size	157.46 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	VBT2080C-E3 Datasheet

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VT2080C-E3, VFT2080C-E3, VBT2080C-E3, VIT2080C-E3 www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2080C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT2080C PIN 1 PIN 2 PIN 3 TO-262AA K FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.