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VBT2080S-M3 - Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VBT2080S-M3
Manufacturer Vishay
File Size 99.52 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT2080S-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VBT2080S-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VBT2080S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 20 A 80 V 150 A 0.