VBT2080S-M3 Description
VBT2080S-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A TMBS ® D2PAK (TO-263AB) K A NC VBT2080S NC K A HEATSINK DESIGN SUPPORT TOOLS click logo to get started.
VBT2080S-M3 Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum
- Material categorization: for definitions of pliance