VBT6045CBP
VBT6045CBP is Trench MOS Barrier Schottky Rectifier Rectifier manufactured by Vishay.
.Data Sheet.co.kr
New Product
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Not remended for PCB bottom side wave mounting
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT6045CBP
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TOP max. 2 x 30 A 45 V 320 A 0.47 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding pound meets UL 94 V-0 flammability rating Base P/N-E3
- Ro HS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test SYMBOL VRRM IF(AV) (1) IFSM TOP, TSTG TJ (2) VBT6045CBP 45 60 A 30 320
- 40 to + 150 ≤ 200 A °C °C UNIT V
Document Number: 89374 Revision: 03-Nov-10
For technical questions within your region, please contact one of the following: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay.
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Datasheet...
