VBT6045C
VBT6045C is Dual Low-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
New Product
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.33 V at IF = 10 A
TMBS ®
TO-263AB
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Not remended for PCB bottom side wave mounting
- pliant to Ro HS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT6045C
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 2 x 30 A 45 V 320 A 0.47 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding pound meets UL 94 V-0 flammability rating Base P/N-E3
- Ro HS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) IFSM TJ, TSTG SYMBOL VRRM VBT6045C 45 60 A 30 320
- 40 to + 150 A °C UNIT V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range
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Document Number: 89362 Revision: 03-Nov-10
For technical questions within your region, please contact one of the following: Diodes Americas@vishay., Diodes Asia@vishay., Diodes Europe@vishay.
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