VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay Siliconix

Part number	VBT6045C
Manufacturer	Vishay Siliconix
File Size	99.34 KB
Description	Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VBT6045C Datasheet
Additional preview pages of the VBT6045C datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
Not recommended for PCB bottom side wave mounting.
Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT6045C PIN 1 PIN 2 K.

📁 Similar Datasheet

VBT6045C-E3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT6045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT6045CBP - Trench MOS Barrier Schottky Rectifier Rectifier (Vishay)
VBT6045CBP-M3 - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10200C-E3 - Trench MOS Barrier Schottky Rectifier (Vishay)
VBT10202C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VBT1045BP - Trench MOS Barrier Schottky Rectifier (Vishay)

Other Datasheets by Vishay Siliconix

Published: Mar 31, 2011 |