VBT6045C-M3 Datasheet | Vishay

.vishay. Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-263AB 2 1 Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C - Material categorization: For definitions of pliance please see .vishay./doc?99912 VBT6045C PIN 1 PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM 2 x 30 A 45 V 320 A VF at IF = 30 A 0.47 V TJ max. Diode variation 150 °C mon cathode MECHANICAL DATA Case: TO-263AB Molding pound meets UL 94 V-0 flammability rating Base...