VBT10200C-E3
VBT10200C-E3 is Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
VT10200C-E3, VFT10200C-E3, VBT10200C-E3, VIT10200C-E3
.vishay.
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TO-220AB
TMBS ®
ITO-220AB
VT10200C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
VFT10200C
PIN 1
PIN 2
PIN 3
TO-262AA K
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 275 °C max. 10 s, per JESD 22-B106 (for
TO-220AB, ITO-220AB and TO-262AA package)
- Material categorization: For definitions of pliance please see .vishay./doc?99912...
