VBT10200C-E3 - Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

Part number	VBT10200C-E3
Manufacturer	Vishay
File Size	154.89 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	VBT10200C-E3 Datasheet
Additional preview pages of the VBT10200C-E3 datasheet.

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Published: Feb 5, 2016 |