• Part: VBT10202C-M3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 141.57 KB
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Vishay
VBT10202C-M3
VBT10202C-M3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
VT10202C-M3, VBT10202C-M3, VIT10202C-M3 .vishay. Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB VT10202C 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K TO-262AA K Features - Trench MOS Schottky technology generation 2 - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package) - Material categorization: For definitions of pliance please see .vishay./doc?99912 TYPICAL APPLICATIONS For...