VBT1045C Description
New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB.
VBT1045C Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Not remended for PCB bottom side wave mounting
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC