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VBT1045C Datasheet Dual Low-voltage Trench Mos Barrier Schottky Rectifier

Manufacturer: Vishay

Overview: New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.

Datasheet Details

Part number VBT1045C
Manufacturer Vishay
File Size 131.63 KB
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet VBT1045C_Vishay.pdf

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K.
  • Not recommended for PCB bottom side wave mounting.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1 VBT1045C PIN 1 PIN 2 K.

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VBT1045C Distributor