VBT1045CBP Description
.DataSheet.co.kr New Product VBT1045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB.
VBT1045CBP Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Not remended for PCB bottom side wave mounting
- pliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
VBT1045CBP Applications
- RoHS pliant, mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As