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VBT1045C-E3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VBT1045C PIN 1 K PIN 2.

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Datasheet Details

Part number VBT1045C-E3
Manufacturer Vishay
File Size 86.73 KB
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VBT1045C-E3 Datasheet

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www.vishay.com VBT1045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 VBT1045C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2 x 5.0 A 45 V 100 A 0.