VBT1045C-E3
VBT1045C-E3 is Dual Low-Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
.vishay.
Vishay General Semiconductor
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.34 V at IF = 2.5 A
TMBS ®
TO-263AB
2 1
Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
- Material categorization: For definitions of pliance please see .vishay./doc?99912
VBT1045C
PIN 1
PIN 2
HEATSINK
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A...
