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VF20120C Datasheet PDF

Vishay VF20120C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Part No. VF20120C
Datasheet VF20120C Download
Manufacturer
Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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VF20120C datasheet page 1 preview

FEATURES

● Trench MOS Schottky technology
● Low forward voltage drop, low power losses
● High efficiency operation
● Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
● Material categorization: for definitions of compliance please see

TYPICAL APPLICATIONS

For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A TJ max. 0.64 V 150 °C Package ITO-220AB Diode variation Dual common cathode

MECHANICAL DATA

Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solde
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