Vishay VF20120C
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
● Trench MOS Schottky technology● Low forward voltage drop, low power losses
● High efficiency operation
● Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
● Material categorization: for definitions of compliance please see
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A TJ max. 0.64 V 150 °C Package ITO-220AB Diode variation Dual common cathodeMECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximumMAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.