Datasheet4U Logo Datasheet4U.com

VF20200C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Low thermal resistance.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
  • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, I.

📥 Download Datasheet

Datasheet Details

Part number VF20200C-E3
Manufacturer Vishay
File Size 200.43 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VF20200C-E3 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
VF28 Plug-In Relays Mini 280 Relays Tyco Electronics
VF294 Surface Mount VCXO ETC

Other Datasheets by Vishay

Part Number Description
VF20200C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20200G Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20200G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier
VF20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VF20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
V20200C-E3, VF20200C-E3, VB20200C-E3, VI20200C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20200C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20200C 1 2 3 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20200C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 3 VI20200C 2 1 PIN 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 200 V 120 A 0.