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VF20200C Datasheet PDF

Vishay VF20200C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Part No. VF20200C
Datasheet VF20200C Download
Manufacturer
Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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VF20200C datasheet page 1 preview

FEATURES

● Trench MOS Schottky technology
● Low forward voltage drop, low power losses
● High efficiency operation
● Low thermal resistance
● Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
● Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package)
● Material categorization: For definitions of compliance please see TO-263AB K TO-262AA K

TYPICAL APPLICATIONS

For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VB20200C PIN 1 K PIN 2 HEATSINK VI20200C 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 2 x 10 A 200 V 120 A 0.68 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, comme...
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