• Part: VF30100C-E3
  • Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 208.57 KB
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Vishay
VF30100C-E3
VF30100C-E3 is Dual High Voltage Trench MOS Barrier Schottky Rectifier manufactured by Vishay.
V30100C-E3, VF30100C-E3, VB30100C-E3, VI30100C-E3 .vishay. Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.455 V at IF = 5 A TO-220AB ITO-220AB V30100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) VF30100C PIN 1 PIN 2 PIN 3 TO-262AA K Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Low thermal resistance - Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) - Material categorization: for definitions of pliance please see .vishay./doc?99912 2 1 VB30100C PIN...