• Part: VF30120C
  • Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier
  • Manufacturer: Vishay
  • Size: 226.07 KB
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Datasheet Summary

.DataSheet.co.kr New Product V30120C, VF30120C, VB30120C & VI30120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB Features - Trench MOS Schottky technology - Low forward voltage drop, low power losses - High efficiency operation 2 V30120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF30120C PIN 1 PIN 3 PIN 2 - Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) - Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) - ponent in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency inverters, switching...