VF30120SG
Key Features
- Trench MOS Schottky technology
- Low forward voltage drop, low power losses
- High efficiency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Part: VF30120SG
- Description: High-Voltage Trench MOS Barrier Schottky Rectifier
- Manufacturer: Vishay
- Size: 212.05 KB