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VFT3045BP Description

Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A TMBS ® ITO-220AC.

VFT3045BP Key Features

  • Trench MOS Schottky technology
  • Low forward voltage drop, low power losses
  • High efficiency operation
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
  • pliant to RoHS Directive 2011/65/EU
  • Halogen-free according to IEC 61249-2-21 definition

VFT3045BP Applications

  • halogen-free, RoHS pliant, and mercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker
  • 40 to + 150 1500  200