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VFT3045CBP - Trench MOS Barrier Schottky Rectifier Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21 definition 1 VFT3045CBP PIN 1 PIN 3 PIN 2 2 3.

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Datasheet Details

Part number VFT3045CBP
Manufacturer Vishay
File Size 138.84 KB
Description Trench MOS Barrier Schottky Rectifier Rectifier
Datasheet download datasheet VFT3045CBP Datasheet
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Full PDF Text Transcription

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www.DataSheet.co.kr New Product VFT3045CBP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A TMBS ® ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 1 VFT3045CBP PIN 1 PIN 3 PIN 2 2 3 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TOP max. 2 x 15 A 45 V 200 A 0.
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