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VFT4045BP - Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Compliant to RoHS Directive 2011/65/EU 2 1.
  • Halogen-free according to IEC 61249-2-21 definition VFT4045BP PIN 1 PIN 2.

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Datasheet Details

Part number VFT4045BP
Manufacturer Vishay
File Size 140.99 KB
Description Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT4045BP Datasheet
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Full PDF Text Transcription

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VFT4045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.28 V at IF = 5 A TMBS ® ITO-220AC FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2011/65/EU 2 1 • Halogen-free according to IEC 61249-2-21 definition VFT4045BP PIN 1 PIN 2 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) VRRM IFSM VF at IF = 40 A TOP max. (AC mode) TJ max. (DC forward current) 40 A 45 V 240 A 0.
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