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VFT4045C-M3 - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: For definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VFT4045C-M3
Manufacturer Vishay
File Size 80.22 KB
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VFT4045C-M3 Datasheet
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Full PDF Text Transcription

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www.vishay.com VFT4045C-M3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.28 V at IF = 5.0 A TMBS ® ITO-220AB 123 VFT4045C PIN 1 PIN 2 PIN 3 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 45 V 240 A 0.
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