Datasheet4U.com

VI30120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Product Overview

Vishay

📥 Download Datasheet

VI30120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier by Vishay - Datasheet Preview — Datasheet preview – VI30120C

Datasheet Details

Part number	VI30120C
Manufacturer	Vishay
File Size	130.72 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VI30120C Datasheet
Additional preview pages of the VI30120C datasheet.

Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Solder dip 275 °C max. 10 s, per JESD 22-B106.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 Similar Datasheet

VI30120S - High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
VI315-2 - LCD (varitronix)
VI315-DP - LCD (varitronix)
VI315-DPRC - LCD (ETC)

Other Datasheets by Vishay

VI30120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30120S - High-Voltage Trench MOS Barrier Schottky Rectifier
VI30120SG - High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VI30100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VI30100S - High-Voltage Trench MOS Barrier Schottky Rectifier

Published: Feb 2, 2012 |