Vishay VN2010L
N-Channel 200-V (D-S) MOSFETs
| Part No. | VN2010L |
|---|---|
| Datasheet | VN2010L Download |
| Manufacturer |  Vishay |
| Description | N-Channel 200-V (D-S) MOSFETs |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70215 S-04279—Rev. C, 16-Jul-01 TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg VN2010L 200 "30 0.19 0.12 0.8 0.8 0.32 156 –55 to 150 BS107 200 "25 0.12 Unit V A 0.5 W 250 _C/W _C 11-1 VN2010L/BS107 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VN2010L Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Drain Leakage Current V(BR)DSS VGS(th) IGSS IDSV VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "15 V VDS = 70 V, VGS = 0.2 V VDS = 130 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 160 V, VGS = 0...
