VO610A Overview
Key Specifications
Package: SMD/SMT
Mount Type: Surface Mount
Pins: 4
Height: 4.3 mm
Description
The VO610A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin plastic dual inline package. AGENCY APPROVALS (All parts are certified under base model VO610A) - BSI: EN 60065:2002, EN 60950:2000 - DIN EN 60747-5-5, available with option 1 - FIMKO EN 60065, EN 60335-1, EN 60950-1 - UL file no.
Key Features
- Temperature range
- 55 °C to + 110 °C
- Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
- Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
- Thickness through insulation 0.4 mm
- Material categorization: For definitions of compliance please see A C 1 2 4 3 E C