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VS-10BQ100-M3 Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

Overview: www.vishay.com VS-10BQ100-M3 Vishay Semiconductors High Performance Schottky Rectifier, 1 A Cathode Anode SMB (DO-214AA) PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM TJ max. EAS Package 1A 100 V 0.59 V 1 mA at 125 °C 175 °C 1.

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General Description

The VS-10BQ100-M3 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards.

Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 1.0 Apk, TJ = 125 °C Range VALUES 1 100 780 0.59 -55 to +175 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-10BQ100-M3 100 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS 50 % duty cycle at TL = 143 °C, rectangular waveform 5 μs sine or 3 μs rect.

Key Features

  • Low forward voltage drop.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Small foot print, surface mountable.
  • High frequency operation.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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