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VS-10ETS08-M3 - Input Rectifier Diode

General Description

High voltage rectifiers optimized for very low forward voltage drop with moderate leakage.

These devices are intended for use in main rectification (single or three phase bridge).

Key Features

  • Very low forward voltage drop.
  • 150 °C max. operating junction temperature.
  • Glass passivated pellet chip junction.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription for VS-10ETS08-M3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VS-10ETS08-M3. For precise diagrams, and layout, please refer to the original PDF.

www.vishay.com VS-10ETS...-M3 Series Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A 2 1 3 TO-220AC 2L Base cathode 2 1 3 Cathode Anode PRIMARY CHARACTERI...

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2 1 3 TO-220AC 2L Base cathode 2 1 3 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM TJ max. Package 10 A 800 V to 1200 V 1.1 V 160 A 150 °C TO-220AC 2L Circuit configuration Single FEATURES • Very low forward voltage drop • 150 °C max. operating junction temperature • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.

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