VS-20CTQ150SHM3 Description
EAS Diode variation 2 x 10 A 150 V 0.66 V 5.0 mA at 125 °C 175 °C 1.0 mJ mon cathode.
VS-20CTQ150SHM3 Key Features
- 175 °C TJ operation
- Center tap configuration
- Low forward voltage drop
- High frequency operation
- High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
- Guard ring for enhanced ruggedness and long term reliability
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified meets JESD-201 class 1A whisker test
- Material categorization: for definitions of pliance please see .vishay./doc?99912