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VS-20CTQ150SPbF Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

General Description

This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature.

The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.

Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.  MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform tp = 5 μs sine 10 Apk, TJ = 125 °C (per leg) Range VALUES 20 150 1030 0.66 -55 to +175 VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-20CTQ150SPbF VS-20CTQ150-1PbF 150 UNITS A V A V °C UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current  See fig.

Overview

www.vishay.com VS-20CTQ150SPbF, VS-20CTQ150-1PbF Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A TO-263AB (D2PAK) TO-262AA Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-20CTQ150SPbF 2 1 Common 3 Anode cathode Anode VS-20CTQ150-1PbF PRODUCT SUMMARY IF(AV) VR VF at IF IRM max.

TJ max.

EAS Package 2 x 10 A 150 V 0.66 V 5.0 mA at 125 °C 175 °C 1.

Key Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High frequency operation.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • AEC-Q101 qualified.
  • Material categorization: for definitions of compliance please see ww.