VS-40MT120UHAPbF Description
VS-40MT120UHAPbF Vishay Semiconductors “Half Bridge” IGBT MTP (Ultrafast NPT IGBT), 80 A MTP PRIMARY CHARACTERISTICS VCES VCE(on) typical at VGE = 15 V IC at TC = 25 °C Speed 1200 V 3.36 V 80 A 8 kHz to 30 kHz Package MTP Circuit configuration Half bridge.
VS-40MT120UHAPbF Key Features
- Ultrafast non punch through (NPT) technology
- Positive VCE(on) temperature coefficient
- 10 μs short circuit capability
- Square RBSOA
- HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF
- Al2O3 DBC
- Very low stray inductance design for high speed operation
- UL approved file E78996
- Designed and qualified for industrial level
- Material categorization: for definitions of pliance please see .vishay./doc?99912
VS-40MT120UHAPbF Applications
- Rugged with ultrafast performance