VS-40MT120UHTAPbF Description
VS-40MT120UHAPbF, VS-40MT120UHTAPbF Vishay Semiconductors "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A MTP PRODUCT SUMMARY VCES VCE(on) typical at VGE = 15 V IC at TC = 25 °C Package Circuit 1200 V 3.36 V 80 A MTP Half bridge.
VS-40MT120UHTAPbF Key Features
- Ultrafast Non Punch Through (NPT) technology
- Positive VCE(on) temperature coefficient
- 10 μs short circuit capability
- Square RBSOA
- HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF
- Al2O3 DBC
- Optional SMD thermistor (NTC)
- Very low stray inductance design for high speed operation
- UL approved file E78996
- Speed 8 kHz to 60 kHz
VS-40MT120UHTAPbF Applications
- Rugged with ultrafast performance