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VS-43CTQ080S-M3 - High Performance Schottky Rectifier

Key Features

  • 175 °C TJ operation.
  • Center tap configuration.
  • Low forward voltage drop.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • High frequency operation.
  • Guard ring for enhanced ruggedness and long term reliability.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
  • Designed and qualified according to JEDEC®-JESD 47.
  • Material categorization: For definit.

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Datasheet Details

Part number VS-43CTQ080S-M3
Manufacturer Vishay
File Size 463.81 KB
Description High Performance Schottky Rectifier
Datasheet download datasheet VS-43CTQ080S-M3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-43CTQ...S-M3, VS-43CTQ...-1-M3 Series Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 Base common cathode 2 Base common cathode 2 2 1 Common 3 Anode cathode Anode VS-43CTQ...S-M3 2 1 Common 3 Anode cathode Anode VS-43CTQ...-1-M3 PRODUCT SUMMARY IF(AV) 2 x 20 A VR 80 V, 100 V VF at IF IRM max. 0.67 V 11 mA at 125 °C TJ max. 175 °C EAS Package 7.