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VS-80CNQ035APbF Datasheet High Performance Schottky Rectifier

Manufacturer: Vishay

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General Description

The center tap Schottky rectifier module series has been optimized for very low forward voltage drop, with moderate leakage.

The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.

Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.        MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM IFSM VF TJ Rectangular waveform Range tp = 5 μs sine 40 Apk, TJ = 125 °C (per leg) Range VALUES 80 35 to 45 5800 0.47 -55 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-80CNQ035APbF 35 VS-80CNQ040APbF 40 VS-80CNQ045APbF 45 UNITS V Revision: 09-Dec-14 1 Document Number: 94255 For

Overview

VS-80CNQ035APbF, VS-80CNQ040APbF, VS-80CNQ045APbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, New Generation 3, D-61 Package, 2 x 40 A VS-80CNQ...APbF D-61-8 VS-80CNQ...ASMPbF Base common cathode 12 Anode Common 1 cathode 3 Anode 2 D-61-8-SM VS-80CNQ...ASLPbF 12 Anode Common 1 cathode 3 Anode 2 Base common cathode D-61-8-SL 1 Anode 1 3 Anode 2 PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM max.

TJ max.

Diode variation EAS D-61 2 x 40 A 35 V, 40 V, 45 V 0.

Key Features

  • 150 °C TJ operation.
  • Center tap module.
  • Very low forward voltage drop.
  • High frequency operation.
  • High power discrete.
  • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
  • Guard ring for enhanced ruggedness and long term reliability.
  • New fully transfer-mould low profile, small footprint, high current package.
  • Through-hole versions are currently available for use.

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