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VS-ETF150Y65N - EMIPAK 2B PressFit Power-Module

General Description

VS-ETF150Y65N is an integrated solution for a multi level inverter stage in a single package.

Key Features

  • Trench IGBT technology.
  • FRED Pt® clamping diodes.
  • PressFit pins technology.
  • Exposed Al2O3 substrate with low thermal resistance.
  • Short circuit rated.
  • Square RBSOA.
  • Integrated thermistor.
  • Low internal inductances.
  • Low switching loss.
  • PressFit pins locking technology. Patent # US.263.820 B2.
  • UL approved file E78996.
  • Material categorization: for definitions of compliance please see www. visha.

📥 Download Datasheet

Datasheet Details

Part number VS-ETF150Y65N
Manufacturer Vishay
File Size 265.76 KB
Description EMIPAK 2B PressFit Power-Module
Datasheet download datasheet VS-ETF150Y65N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.vishay.com VS-ETF150Y65N Vishay Semiconductors EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A EMIPAK-2B (package example) PRIMARY CHARACTERISTICS Q1 to Q4 IGBT VCES VCE(on) typical at IC = 150 A IC at TC = 82 °C Speed 650 V 1.70 V 150 A 8 kHz to 30 kHz Package EMIPAK 2B Circuit configuration 3-levels half bridge inverter stage FEATURES • Trench IGBT technology • FRED Pt® clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance • Short circuit rated • Square RBSOA • Integrated thermistor • Low internal inductances • Low switching loss • PressFit pins locking technology. Patent # US.263.820 B2 • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.