Description
VS-ETF150Y65N is an integrated solution for a multi level inverter stage in a single package.
Features
- Trench IGBT technology.
- FRED Pt® clamping diodes.
- PressFit pins technology.
- Exposed Al2O3 substrate with low thermal resistance.
- Short circuit rated.
- Square RBSOA.
- Integrated thermistor.
- Low internal inductances.
- Low switching loss.
- PressFit pins locking technology. Patent # US.263.820 B2.
- UL approved file E78996.
- Material categorization: for definitions of compliance
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VS-ETF150Y65N Datasheet
