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VS-ETF150Y65U - EMIPAK 2B PressFit Power-Module

General Description

VS-ETF150Y65U is an integrated solution for a multi level inverter sta

Key Features

  • Trench IGBT technology.
  • FRED Pt® clamping diodes.
  • PressFit pins technology.
  • Exposed Al2O3 substrate with low thermal resistance.
  • Short circuit rated.
  • Square RBSOA.
  • Integrated thermistor.
  • Low internal inductances.
  • Low switching loss.
  • UL approved file E78996.
  • PressFit pins locking technology PATENT(S): www. vishay. com/patents.
  • Material categorization: for definitions of compliance please se.

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Datasheet Details

Part number VS-ETF150Y65U
Manufacturer Vishay
File Size 346.36 KB
Description EMIPAK 2B PressFit Power-Module
Datasheet download datasheet VS-ETF150Y65U Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com VS-ETF150Y65U Vishay Semiconductors EMIPAK 2B PressFit Power Module 3-Levels Half Bridge Inverter Stage, 150 A EMIPAK 2B (package example) PRIMARY CHARACTERISTICS Q1 - Q4 IGBT STAGE VCES 650 V VCE(on) typical at IC = 100 A 1.72 V Q2 - Q3 IGBT STAGE VCES VCE(on) typical at IC = 150 A IC at TC = 82 °C Speed 650 V 1.75 V 150 A 8 kHz to 30 kHz Package EMIPAK 2B Circuit configuration 3-levels half bridge inverter stage FEATURES • Trench IGBT technology • FRED Pt® clamping diodes • PressFit pins technology • Exposed Al2O3 substrate with low thermal resistance • Short circuit rated • Square RBSOA • Integrated thermistor • Low internal inductances • Low switching loss • UL approved file E78996 • PressFit pins locking technology PATENT(S): www.vishay.