VS-FB190SA10 Overview
High current density power MOSFETs are paralleled into a pact, high power module providing the best bination of switching, ruggedized design, very low on-resistance and cost effectiveness. The isolated SOT-227 package is preferred for all mercial-industrial applications at power dissipation levels to approximately higher than 500 W. The low and easy connection to the SOT-227 package contribute to its universal...
VS-FB190SA10 Key Features
- Fully isolated package
- Very low on-resistance
- Fully avalanche rated
- Dynamic dV/dt rating
- Low drain to case capacitance
- Low internal inductance
- Optimized for SMPS
VS-FB190SA10 Applications
- Easy to use and parallel