VS-GB100TH120U
Description
Vishay’s IGBT power module provides ultrafast switching speed as well as short circuit ruggedness. It is designed for applications such as electronic welders and inductive heating. PARAMETER SYMBOL TEST CONDITIONS Collector to emitter voltage VCES Gate to emitter voltage VGES Collector current TC = 25 °C IC TC = 80 °C Pulsed collector current ICM (1) tp = 1 ms Diode continuous forward current IF Diode maximum forward current IFM(1) Maximum power dissipation PD TJ = 150 °C Isolation voltage VISOL f = 50 Hz, t = 1 min Note (1) Repetitive rating: Pulse width limited by maximum junction temperature.
Key Features
- NPT IGBT technology
- 10 μs short circuit capability
- Low switching losses
- Rugged with ultrafast performance
- VCE(on) with positive temperature coefficient
- Low inductance case
- Fast and soft reverse recovery antiparallel FWD
- Isolated copper baseplate using DCB (Direct Copper Bonding) technology
- Material categorization: for definitions of pliance please see .vishay./doc?99912
