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VS-GB100TH120U
Vishay Semiconductors
Molding Type Module IGBT, 2 in 1 Package, 1200 V and 100 A
Double INT-A-PAK
PRODUCT SUMMARY
VCES
IC at TC = 80 °C VCE(on) (typical) at IC = 100 A, 25 °C
Package
Circuit
1200 V 100 A 3.10 V Double INT-A-PAK Half bridge
FEATURES • NPT IGBT technology • 10 μs short circuit capability • Low switching losses • Rugged with ultrafast performance • VCE(on) with positive temperature coefficient • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper
Bonding) technology • Material categorization: for definitions of compliance
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