VS-HFA16TB120-M3
FEATURES
- Ultrafast and ultrasoft recovery
- Very low IRRM and Qrr
- Designed and qualified according to
JEDEC®-JESD 47
- Material categorization: for definitions of pliance please see .vishay./doc?99912
BENEFITS
- Reduced RFI and EMI
- Reduced power loss in diode and switching transistor
- Higher frequency operation
- Reduced snubbing
- Reduced parts count
PRIMARY CHARACTERISTICS
IF(AV) VR VF at IF trr typ. TJ max. Package
16 A 1200 V 2.3 V 30 ns 150 °C 2L TO-220AC
Circuit configuration
Single
DESCRIPTION
VS-HFA16TB120... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb bination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16TB120... is especially well suited for use as the panion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time,...
